Zero
Point Energy Diode Project
Project
Director: Thomas Valone, PhD,
PE
5020 Sunnyside Avenue, Suite
209
Beltsville MD
20705
Nonprofit
501(c)3 organization
202-452-7674,
301-220-0440
DIRECT:
301-513-5242
FAX:
301-513-5728
http://www.integrityresearchinstitute.org/
Executive
Summary
The Zero Point Energy (ZPE) Diode Project has been an exciting development at IRI since the discovery in 2003 that semiconductor junctions exhibit measurable Johnson noise at any temperature, including microdegrees above absolute zero. This discovery has been exploited by the project director for the purpose of a new, renewable energy source. Though the evidence has been in the literature for years, no one except perhaps a twenty-year-old patent by Charles Brown, US #3,890,161, also teaches the basic technique for creating an array of metal-metal diodes for rectifying ZPE and creating a long lasting electricity source.
The US currently spends between 5 and 10 cents per kilowatt-hour (kWh) depending upon whether it is a resident or commercial customer. Furthermore, the US Electric Power Industry generates approximately 4,000 billion kWh on an annual basis (http://www.eia.doe.gov/). These figures indicate that electricity consumption is about a $300 billion market waiting to be hijacked from the public utilities.
The production of electrical current using solid-state rectifiers is common-place with “thermionics”. However, the Seebeck or thermoelectric effect which produces electricity from dissimilar metals while at different temperatures is very inefficient. A few recent patents like Kucherov “Tunneling-Effect Energy Converters” #6,946,596 (visit www.google.com/patents) and Hagelstein’s “Thermal Diode for Energy Conversion” #6,396,191 require at least 10°C temperature difference and a six meter cube pool of water to supply a house with electricity.
Since the electrical grid nationwide is aging, with an estimate cost of hundreds of billions to repair or upgrade to a “smart grid”, it is proposed that distributed single cubic-meter electricity generating units may instead by necessity become a reality in the near future with the emergence of zero point energy (ZPE) rectifiers deployed in the form of three-dimensional arrays. This event is predicted to create a disruptive effect on the public utilities, while it empowers ordinary individuals from all walks of life including third world countries, opening up vast areas of the world that are presently uninhabitable due to the lack of on-site energy generation capability.
This executive summary addresses the basic built-in voltage potential for all semiconductor p-n junctions and various rectifying devices suitable for generating DC electricity at “zero bias” (with no bias DC voltage applied whatsoever). Tunnel diodes are one class of rectifiers that are qualified. Even microwave diodes are good choices since many are designed for zero bias operation (see below). Reference articles are attached in the Appendix showing the use of “broadband spiral antennas” and phase conjugate mirrors for amplifying electromagnetic frequencies that make up quantum noise. The tunneling current in the diodes can also be influenced by the use of magnetic fields as low as 10 gauss as well. The recent discovery of a “Brownian Refrigerator” or “the world’s smallest fridge” that “rectifies thermal energy” accentuates the additional spin-off from the ZPE Diode Project:
Every ZPE
diode array will also rectify thermal noise and cause
refrigeration
In the future scenario of global warming, thousands of people in temperate zones are at risk during the summer for heat stroke (2000 people died in France during a heat wave that lasted two weeks in 2002). Therefore, having a one-meter sealed cube that generates electricity and cools the building will serve two vital purposes. It will also make rural areas and third world countries habitable.
This executive summary ends with the complete reproduction of Christian Beck’s article “Could dark energy be measured in the lab?” and two of Koch’s journal article cover sheets that he references, proving the remarkable detection and quantification of zero point energy quantum fluctuations (nonthermal noise) in the lab.
Two private contractors, Tom Schum and Paul Lowrance, are offering their services in diode array construction and measurements.
This proposal is for a modest $350,000 investment over a one-year period, which will be sufficient for a production of a prototype as a proof of principle for electricity generation.
Chief Scientist Dennis
Bushnell from NASA recently asked me for “substantive experiments” showing
extraction of energy from the quantum vacuum, perhaps as a challenge to my book,
Zero Point Energy: The Fuel of the Future. In reply, I
centered upon the main discovery that I made, which is that there exists a class
of diodes (rectifiers) that operate at “zero-bias” (no voltage applied to make
them work) and up into microwave frequencies, that are suitable for generating
trickle currents from the zero point energy quantum vacuum because of natural
nonthermal electrical fluctuations (Johnson noise).
Furthermore, there are
peer-reviewed journal articles that also show tunneling at zero voltage ("zero
bias"). Several microwave diodes below in the book excerpt also exhibit this
feature. However, you have to appreciate that looking in the noise level (1/f
noise or Johnson noise) is where ZPE manifests. (That's where my first
Practical Conversion of Zero Point Energy from the Quantum Vacuum for the
Performance of Useful Work book and PhD thesis comes in.) Nature has
also been helpful since Johnson noise in the diode is also generated at the
junction itself and
therefore, requires no minimum signal to initiate the conduction in one
direction.
The following US patents as
the most significant in ZPE research: "Rectifying Thermal Electric Noise" by
Charles Brown #3,890,161, and #4,704,622 by Capasso, which actually
acknowledge ZPE for their functional nature (Note: www.google.com/patents is a good source
of printable patents). Capasso is an IBM engineer and indicates that his
tunneling device only works if ZPE is present, much like what Planck discovered
a century ago and Koch detected decades ago in the lab (Koch, 1982). I tend to
think that metal-metal nanodiodes probably will be a popular brand for ZPE usage
with millipore sheet assembly, as Brown suggests. I also cite the work of
Yasamoto, et al. (2004, Science, 304:1944) covering peptide molecular
photodiodes just 1 nm across -- another example of a molecular tool for studying
this zero point energy that shows up on the molecular level.
YES! These
diodes demonstrate substantive, greater than uncertainty, generation of energy
from ZPE. In fact, simple coils do as well, according to the published Koch
articles. Don’t believe me? Check out the frenzy of activity that I cite
concerning Puthoff's right hand man, Dr. Eric Davis, as well as Prof. Christian
Beck overseas. Both of them finally woke up to the multiple papers that Koch
published years ago as he carefully measured the electrical noise that should
not have been happening in his coils. Eric just made a big deal about it at
the 2006 STAIF conference which I attended and is trying to get Lockheed
money to fund a REPLICATION of Koch's work (Davis et al., 2006), without going
any further toward my recommendation of diode technology (in other words,
he likes plain academic stuff without aiming for a commercial device). Professor
Beck just wrote a book on ZPE after published a paper about dark
energy being measurable in the laboratory (Beck et al., 2004).
I should also cite Dr. Fabrizio Pinto's work (Pinto, 1999), among others like the Brown patent, for making reasonable calculations of the energy density of arrays of vacuum engines like the ZPE diodes, which conservatively reach estimates of hundreds of kilowatts/cubic meter. Below is an excerpt from Chapter 5 of my book, Zero Point Energy: The Fuel of the Future to conclude with specific details that further help to explain zero bias diodes.
In 1994, Smoliner reported,
for the first time, resonant tunneling while applying no voltage at all to the
one-dimensional quantum wells that his team had created. They used “anharmonic
oscillation” to substitute for zero point energy, which they ignored “for
simplicity” though it was powering the tunneling of their electrons in each
well. The figure below shows the
remarkable German achievement, where the electrons prefer a zero voltage bias
for the best results.
Other diodes which exhibit the
ability to rectify EMF energy include the class of "backward diodes" which
operate with zero bias (no external power supply input). (See US patent 6,635,907 "Type II Interband
Heterostructure Backward Diodes" and also US patent 6,870,417 "Circuit for
Loss-Less Diode Equivalent") These have been used in microwave
detection for decades and have never been tested for nonthermal zero point
energy fluctuation conversion. There is every reason to presume they
include such ZPE radiation conversion in their everyday operation but it is
unnoticed with other EMF energy being so much larger in amplitude. US Patent
6,635,907 from HRL Laboratories describes a diode with a very desirable, "highly
nonlinear portion of the I-V curve near zero bias." These diodes produce a
significant current of electrons when microwaves in the gigahertz range are
present. Another example is US Patent 5,930,133 from Toshiba entitled,
"Rectifying device for achieving a high power efficiency." They use a tunnel
diode in the backward mode so that "the turn-on voltage is zero." Could there be
a better device for small voltage ZPE fluctuations that don't like to jump big
barriers?
A completely passive, unamplified zero bias diode
converter/detector for millimeter (GHz) waves was developed by HRL Labs in 2006
under a DARPA contract, utilizing an Sb-based "backward tunnel diode" (BTD). It
is reported to be a "true zero-bias diode" that does not have significant 1/f
noise when it is unamplified. It was developed for a "field radiometer" to
"collect thermally radiated power" (in other words, 'night vision'). The diode
array mounting allows a feed from horn antenna, which functions as a passive
concentrating amplifier. The important clue is the "noise equivalent power" of
1.1 pW per root hertz (picowatts are a trillionth of a watt) and the "noise
equivalent temperature difference" of 10K, which indicate a sensitivity to
Johnson noise, the source of which is ZPE. Perhaps HRL Labs will consider
adapting the invention for passive zero-point energy generation (Lynch, et al.,
2006).
Another invention developed in 2005 by the University of California Santa Barbara is the "semimetal-semiconductor rectifier" for similar applications, to rival the metal-semiconductor (Schottky) diodes that are more commonly known for microwave detection. These zero bias diodes can operate at room temperature and have a NEP of about 0.1 pW but a high "RF-to-DC current responsivity" of about 8 A/W (amperes per watt). Most importantly, the inventors claim that the new diodes are about 20 dB more sensitive than the best available zero-bias diodes from Hewlett-Packard (Young et al., 2005).
There also have been other
inventions such as "single electron transistors" that also have "the highest
signal to noise ratio" near zero bias. Furthermore, "ultrasensitive" devices
that convert radio frequencies have been invented that operate at outer space
temperatures (3 degrees above zero point: 3°K). These devices are tiny nanotech
devices so it is possible that lots of them could be assembled in parallel (such
as an array) to produce ZPE electricity with significant power density (Brenning
et al., 2006).
Dr. Peter Hagelstein from Eneco,
Inc. was thinking along the same lines when in 2002 he patented his "Thermal
Diode for Energy Conversion" (US Patent 6,396,191) which uses a thermopile bank
of thermionic diodes. These are slightly different, more like thermocouples,
than the diodes that I am advocating. However, Hagelstein's diodes are so
efficient that he predicts that, with only a 10°C temperature difference, a
water pool of six meters on a side could supply the electricity for a house. He
also suggests their use
as "efficiency boosters" for augmenting the
performance of electric or hybrid cars.
Other devices which also will
provide the fuelless electrical energy cars, planes and homes by
simply using zinc oxide or titanium oxide films that can convert ambient heat
into electricity, as used in photovoltaic panels. A few reports indicate that
these work reliably for years. Such solid-state diode converters will also grab
the nonthermal ZPE in the process and therefore can work in outer space, even
without solar exposure, for spaceships and extraterrestrial settlements during
dust storms and overnight. Recent
FIGURE 1. Updated version of a Brown’s p-n
junction (a) diode array (38) and (b) with parallel conductors (39) added
(Kuriyama, A., Miyata, H., Otto, A., Ogawa, M., Okura, H., Fukutani, K., and
Den, T., “Method for Manufacturing a Semiconductor Device”, U.S. Patent
7,183,127, Feb. 27, 2007, Fig. 4D
and 4E).
developments in nanotechnology assure us that the contemplated diode array can be significantly shrunk in size with no loss of power density, as compared to the Brown patent estimate for example (Charles Brown #3,890,161) from thirty years ago. Brown suggests that metal-metal diodes probably will be a popular brand for ZPE usage with millipore sheet assembly. While Brown patented his invention back in 1975, his idea has been revived and rejuvenated by Kuriyama’s “Method for Manufacturing a Semiconductor Device” US Patent #7,183,127 which cites Brown’s patent and others with similar cylindrically shaped pores for p-n junction design. It is encouraging to note that Kuriyama’s preferred range of diameter for each cylindrical diode is not smaller than 1 nanometer (nm) and not larger than 10 nm, an order of magnitude smaller than Brown.
In addition, several references are cited for nano-hole and nano-wire construction techniques, especially with regard to p-n or p-i-n junctions. A typical example of aluminum-silicon nano-structures has achieved an average diameter of 3 nm per cylinder with a 7 nm spacing between them, with a length of 200 nm per cylinder. Kuriyama also notes that these dimensions also hold if germanium is substituted for silicon. He also includes the important option of an electrode plate on the top and bottom of the diode array, or an electro-conductive substrate for the bottom common conductor. The smallest diameter that Kuriyama cites as a practical example has a 1 nm cylinder width with a 3 nm spacing between the diodes in 1000 nm square semiconductor dies, as seen in Fig. 1. This creates a diode density of approximately 1012 diodes per cm2 which is on the order of self-assembled quantum dot GaAs Schottky diodes grown by atomic layer molecular beam epitaxy (ALMBE) with InAs dots which have a diode density of 1011 per cm2 (Hastas, 2003).
FIGURE 2. Plots of typical input noise root power spectrums
for an FET input amplifier (Northrop, 1997)
The most interesting arrangement of diodes and resistors may be a convenient 10 cm3 (10 cc) box but could be larger if the diode packing density requires it. The proposed DEAC box will perhaps involve a choice of 1) the Hastas self-assembled GaAs Schottky diodes or 2) the Kuriyama high density nano-size cylinder-shaped diodes, both estimated to be in the range of 1011 per cm2 diode density. Using a conservative packing density of 2 mm per layer (with 1.1 mm substrates), we can pack 5 diode array layers in 1 cc and therefore, 5000 diode layers in 10 cc. This raises the diode density to 5 x 1014 diodes (500 trillion diodes) in a 10 cc box. This is a favorable quantity for the estimated picowatt (1 to 10 pW) power level per diode, which yields a minimum of a 500 Watt DC generator from thermal and non-thermal noise combined, for the lowest estimate of 1 pW per diode. It is worthwhile noting that an array of a trillion molecular switches has been proposed using less than 100 zJ (100 x 10-21 joules) per switch based on direct experimental measurement of a single molecule (Loppacher, 2003). Loppacher et al. also note that it requires “less than a femtojoule of energy” to switch a solid state transistor, which may be useful in an advanced design of a switching DEAC for AC output. More information is available in the Space, Propulsion and Energy Conference paper (3Mb pdf) appended to the National Energy Policy Recommendation Report 2009 posted to the Obama Energy and Environment transition team January, 2009.
Beck, Christian and Michael
Mackey, Astrophysics preprint, June 23, 2004 "Has Dark Energy Been Measured in
the Lab?" http://xxx.arxiv.org/abs/astro-ph/0406504
Brenning et al., J. Appl.
Phys. 100, 114321, 2006
Davis et al., Review of
Experimental Concepts for Studying the Quantum Vacuum Field, Space Technology
and Applications International Forum—STAIF 2006, edited by M. S. El-Genk, p.
1390
Hastas, N. A., and
Dimitriadis, C. A., “Low frequency noise of GaAs Schottky diodes with embedded
InAs quantum layer and self-assembled quantum dots”, J. App. Phys., V. 93, N. 7, April 1, (2003), p.
3990.
Jeong et al., On the
non-Arrhenius temperature dependence of the interwell electron tunneling rate in
quasi two dimensional organic quantum wells, J. of Chem. Phys., Vol. 113, No.
17, November, 2000, p. 7613
Koch et al., Measurements of
quantum noise in resistively shunted Josephson junctions, Physical Review B,
Vol. 26, No. 1, July, 1982, p. 74
Lynch, Jonathan et al.
"Unamplified Direct Detection Sensor for Passive Millimeter Wave Imaging"
Passive Millimeter-Wave Imaging Technology IX, edited by Roger Appleby, Proc.
of SPIE, V. 6211, 621101, 2006 - Also see: Schulman et al.
"Sb-heterostructure interband backward diodes" IEEE Electron Device Letters
21, 2000, p. 353-355
Pinto, F., “Engine cycle
of an optically controlled vacuum energy transducer” Phys. Rev. B, Vol. 60, No.
21, 1999
Smoliner et al., Tunnelling
spectroscopy of 0D states, Semicon. Sci. Tech. Vol. 9, 1994, p.
1925
Valone, Thomas, National Energy Policy Recommendation Report 2009
Young, A.C. et al.
"Semimetal-semiconductor rectifiers for sensitive room-temperature microwave
detectors", App.
Phys. Letters, V. 87, 2005, p.163506
----- Original Message -----
From: "Paul" <energymover@gmail.com>
To: "Thomas Valone" <iri@starpower.net>
Sent: Monday, November 17, 2008 10:57 AM
Subject: Re: Fw: My latest paper on ZPE conversion
Dear Thomas,
Thanks for the email and pdf file. I'll
try to read your pdf/paper by
tomorrow.
A brief (very brief) outline
of my research is found at -->
http://sites.google.com/site/selfreliantenergy/
And
a brief outline of my diode research history -->
http://sites.google.com/site/selfreliantenergy/Home/updates
My
research began by analyzing diode arrays by means of conventional
physics,
where I quickly learned that low signal diode modeling
mathematics clearly
predicts diode must rectify natural ambient thermal
energy. Also, it's
know that 2LoT is a macro (not micro) system of
averages, and even at that
there's a known error rate with 2LoT.
Furthermore, I wrote a trapdoor
simulation software where even the
trapdoor is made of atoms. When time
permits I would like to release
this software. The sim shows how natural
ambient thermal energy is
rectified. That was encouraging, so I began
building a diode array.
According to my mathematics, a good inexpensive
diode choice was the
SMS7630, made by Skyworks Inc. Since that time I built
four diode
arrays. All four diode arrays have produced a DC voltage. The
largest
diode array is a 156 in-series SMS7630, that produced up to 204uV DC
@
800Kohms. The measurements revealed some interesting so-called
thermal
equilibrium diode effects. One effect is where the diodes appear to
be
sensitive to change; i.e., temperature , current. One example
-->
1. The diode array was producing 204uV DC.
2. For a period of
about one hour, heat was quickly applied to the diode
array-- ~ 100F.
3.
The heat was removed. The diode array was left alone at normal room
temperatures.
4. Over a period of roughly 5 days the DC voltage decreased
each day
from 204uV to just over 10uV DC. Eventually the DC voltage slowly
began
to increase.
After ~ two weeks from applying the heat, the
diode array DC voltage is
now at 51uV, and climbing each day. I cannot
explain this effect with
electrochemical reactions. My experiments with
electrochemical reactions
have shown the opposite effect in that the DC
voltage from a dead
battery increases when heated up. It's possible there
are some
electrochemical reactions that may have similar effects as the
diode
array, but even if there are such electrochemical effects it's a far
stretch to think the SMS7630 diode produces a few microvolts DC from
electrochemical reactions. According to my estimate calculations, the
plate area of the SMS7630 is ~ 5um * 5um. That's not much area for a
battery. And what atoms would the chemical reactions consist of? In an
attempt to begin to address the electrochemical possibility, I
electrically shorted the diode array for about one month. The diode
array still produced the DC voltage after removing the short.
I have
used various types of custom built voltage meters. My best meter
uses an
electrometer op-amp that produces under 50fA (50e-15 amps) of
bias current.
I have tested the diode arrays inside various shields at
various locations.
For example, the diode array was tested inside
*three* layers of shields (a
small, medium, a very large) at various
locations in the California rural
desert. My diode array has been in air
and inside an oil bath. So I've tried
to take every known precaution. So
far, it has always produce a DC
voltage.
IMO, it's still too early to say that diodes are rectifying
thermal
energy, but it seems hopeful. I wrote another Microsoft Windows
application, Diode NATE, that uses semiconductor mathematics to predict
the DC voltage that a diode would produce. The present version is 0.3.
There's a lot of room for improvement since Diode NATE relies on Spice
parameters provided by the diode manufacture. Such parameters do not
reveal the inner details of the diode. Furthermore, Diode NATE considers
one type of noise, Johnson noise. So there's a lot of room for
improvement for Diode NATE, but the preliminary predictions made by
Diode NATE are relatively close to actual measurements, so far. Here are
a few predictions -->
My 156 in-series SMS7630 diode
array:
Diode NATE: 79uV DC.
Maximum measured: 204uV DC.
Tom Schum's
1N34A 32x32 diode array (very difficult since there are
dozens of Spice
models, and I don't have Tom's spice model):
Diode NATE: 0.21uV
DC.
Measured, according to my analysis of Tom's data: ~ 0.5uV DC (if memory
holds true).
As you can see, so far it appears Diode NATE values are
lower than
actual, about half, but we'll have to see. I would like to add
that by
means of semiconductor physics, I calculated a realistic, yet
conservative, diode array that is predicted to produce 36 watts per
square foot, and 77 billion microscopic diodes per watt. I have not yet
calculated the zero bias resistance of such a diode array, and simply
used a conservative estimate, but it is my opinion that the actual
resistance would be considerably less. So it's possible the 36 watts /
sqft is low. Each Schottky diode junction plate is 100nm x 100nm,
heavily doped @ 5e+18 dopants/cc. The calculations were based on
Silicon, but heavily doped GaAs could be a better choice. Such a diode
array is easily fabricated, even with old technology. IMO, such a chip
consisting of a few hundred of such diodes, when connected to an
appropriate load, would cool down enough to measure the temperature
drop.
IMO, after briefly going over your nice paper, our research appears
remarkably similar. You make reference to ZPE, which IMO is part of
thermal energy.
Regards,
Paul Lowrance
Thomas Valone
wrote:
> Hi Paul,
>
> Tom recommended that I contact you in
regards to any functional diode
> array that you currently have which
generates even a trickle current
> of picoamps. Our nonprofit is
interested in funding any zero bias
> diode development project in that
area.
>
> Attached is my paper on the subject. You might also enjoy
one or more
> of my books on zero point energy as well.
>
>
Sincerely,
>
> Thomas Valone, PhD, PE
> Integrity Research
Institute
> 5020 Sunnyside Avenue, Suite 209
> Beltsville MD
20705
> http://www.integrityresearchinstitute.org/
>
888-802-5243, 301-220-0440
> 800-295-7674, FAX: 301-513-5728
With one layer of 1011 per cm2 diode density as the ideal test prototype, it is proposed to test a thousand diode array for voltage, current and power output as a Phase 1 prototype.
It is expected to confirm the expected 100 mW output from the conservative estimate of a single layer. Therefore, a thousand diode array will produce in the range of 100 nW.
FIGURE 3. Example of the Brown diode
array using Millipore sheets
ZERO POINT ENERGY DIODE PROJECT
BUDGET |
|
|
|
|
|
|
|
|
|
PERSONNEL COSTS |
|
|
|
|
|
|
|
|
|
PROJECT DIRECTOR |
|
|
$80,000 |
|
TRAVEL |
|
|
$5,500 |
|
CHIEF
ENGINEER |
|
|
$20,000 |
|
CONSULTANTS |
|
|
$25,000 |
|
OFFICE |
|
|
$4,000 |
|
|
|
|
|
|
TOTAL OF PERSONNEL
COSTS |
|
|
$134,500
|
|
|
|
|
|
|
|
|
|
|
|
OTPS (Other Than Personnel
Services) |
|
|
|
|
|
|
|
|
|
FACILITY RENT (includes
utilities) |
|
|
$10,000 |
|
LABORATORY EQUIPMENT |
|
|
$51,000 |
|
PARTS & FABRICATION
|
|
|
$18,700 |
|
DIODES |
|
|
$54,300 |
|
INSTRUMENTATION |
|
|
$40,000 |
|
ELECTRICAL SUPPLIES |
|
|
$25,000 |
|
MACHINE SHOP LABOR |
|
|
$7,000 |
|
MAINTENANCE &
SUPPLIES |
|
|
$4,000 |
|
SOFTWARE |
|
|
$2,000 |
|
|
|
|
|
|
TOTAL OF OTPS COSTS
|
|
|
$212,000
|
|
|
|
|
|
|
TOTAL BUDGET |
|
|
$356,500
|
|